Titulo:

MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
.

Sumario:

This paper presents theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with a Morse potential profile using the effective mass approximation method and the envelope wave function. The intersubband transitions are analyzed according to the parameters that define the geometry of the Morse potential to represent the interdiffusion between materials of the barrier and the well. In addition, the peaks of the nonlinear optical rectification are shown as a function of energy of incident photons and their resonance with the transition energy between the two states. An electric field in the growth direction of the quantum well and a magnetic f... Ver más

Guardado en:

1794-1237

2463-0950

12

2016-05-16

85

94

info:eu-repo/semantics/openAccess

http://purl.org/coar/access_right/c_abf2

id metarevistapublica_eia_revistaeia_englishversion_8_article_989
record_format ojs
spelling MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
This paper presents theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with a Morse potential profile using the effective mass approximation method and the envelope wave function. The intersubband transitions are analyzed according to the parameters that define the geometry of the Morse potential to represent the interdiffusion between materials of the barrier and the well. In addition, the peaks of the nonlinear optical rectification are shown as a function of energy of incident photons and their resonance with the transition energy between the two states. An electric field in the growth direction of the quantum well and a magnetic field perpendicular to the heterostructure are applied in order to study the shifts in the optical response peaks in the spectrum of the incident photons.
Martínez Rendón, Valentina
Castaño Uribe, Carolina
Giraldo Martínez, Andrea
González Pereira, Juan Pablo
Restrepo Arango, Ricardo León
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
Quantum well
Morse potential
electric field
magnetic field
nonlinear optical rectification.
12
2
Núm. 2 , Año 2016 : Special Edition of Nanoscience and Nanotechnology (2)
Artículo de revista
Journal article
2016-05-16 00:00:00
2016-05-16 00:00:00
2016-05-16
application/pdf
Revista EIA / English version
Revista EIA / English version
1794-1237
2463-0950
https://revistas.eia.edu.co/index.php/Reveiaenglish/article/view/989
https://revistas.eia.edu.co/index.php/Reveiaenglish/article/view/989
spa
https://creativecommons.org/licenses/by-nc-sa/4.0/
85
94
https://revistas.eia.edu.co/index.php/Reveiaenglish/article/download/989/899
info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
http://purl.org/redcol/resource_type/ARTREF
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/version/c_970fb48d4fbd8a85
info:eu-repo/semantics/openAccess
http://purl.org/coar/access_right/c_abf2
Text
Publication
institution UNIVERSIDAD EIA
thumbnail https://nuevo.metarevistas.org/UNIVERSIDADEIA/logo.png
country_str Colombia
collection Revista EIA / English version
title MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
spellingShingle MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
Martínez Rendón, Valentina
Castaño Uribe, Carolina
Giraldo Martínez, Andrea
González Pereira, Juan Pablo
Restrepo Arango, Ricardo León
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
Quantum well
Morse potential
electric field
magnetic field
nonlinear optical rectification.
title_short MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
title_full MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
title_fullStr MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
title_full_unstemmed MORSE POTENTIAL AS A SEMICONDUCTOR QUANTUM WELLS PROFILE
title_sort morse potential as a semiconductor quantum wells profile
description This paper presents theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with a Morse potential profile using the effective mass approximation method and the envelope wave function. The intersubband transitions are analyzed according to the parameters that define the geometry of the Morse potential to represent the interdiffusion between materials of the barrier and the well. In addition, the peaks of the nonlinear optical rectification are shown as a function of energy of incident photons and their resonance with the transition energy between the two states. An electric field in the growth direction of the quantum well and a magnetic field perpendicular to the heterostructure are applied in order to study the shifts in the optical response peaks in the spectrum of the incident photons.
author Martínez Rendón, Valentina
Castaño Uribe, Carolina
Giraldo Martínez, Andrea
González Pereira, Juan Pablo
Restrepo Arango, Ricardo León
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
author_facet Martínez Rendón, Valentina
Castaño Uribe, Carolina
Giraldo Martínez, Andrea
González Pereira, Juan Pablo
Restrepo Arango, Ricardo León
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
topicspa_str_mv Quantum well
Morse potential
electric field
magnetic field
nonlinear optical rectification.
topic Quantum well
Morse potential
electric field
magnetic field
nonlinear optical rectification.
topic_facet Quantum well
Morse potential
electric field
magnetic field
nonlinear optical rectification.
citationvolume 12
citationissue 2
citationedition Núm. 2 , Año 2016 : Special Edition of Nanoscience and Nanotechnology (2)
publisher Revista EIA / English version
ispartofjournal Revista EIA / English version
source https://revistas.eia.edu.co/index.php/Reveiaenglish/article/view/989
language spa
format Article
rights https://creativecommons.org/licenses/by-nc-sa/4.0/
info:eu-repo/semantics/openAccess
http://purl.org/coar/access_right/c_abf2
type_driver info:eu-repo/semantics/article
type_coar http://purl.org/coar/resource_type/c_6501
type_version info:eu-repo/semantics/publishedVersion
type_coarversion http://purl.org/coar/version/c_970fb48d4fbd8a85
type_content Text
publishDate 2016-05-16
date_accessioned 2016-05-16 00:00:00
date_available 2016-05-16 00:00:00
url https://revistas.eia.edu.co/index.php/Reveiaenglish/article/view/989
url_doi https://revistas.eia.edu.co/index.php/Reveiaenglish/article/view/989
issn 1794-1237
eissn 2463-0950
citationstartpage 85
citationendpage 94
url2_str_mv https://revistas.eia.edu.co/index.php/Reveiaenglish/article/download/989/899
_version_ 1811200281618153472